CM200DU-24H三菱IGBT模块,绝缘栅双极型晶体管,是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低,载流密度大,但驱动电流较大;MOSFET驱动功率很小,开关速度快,但导通压降大,载流密度小
北京京诚宏泰科技原装正品现货供应CM200DU-24H三菱IGBT模块
MITSUBISHI IGBT MODULES
CM200DU-24H产品特点:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
CM200DU-24H产品参数:
VCES=1200V IC=200A
CM75DU-24H
CM100DU-24H
CM100DU-24NFH
CM100DU-34NF
CM150DU-34KA
CM150DU-24H
CM150DU-24F
CM150DU-24NFH
CM200DU-24H
CM200DU-12F
CM200DU-24NFH
CM200DU-34KA
CM300DU-24H
CM300DU-12F
CM300DU-24NFH
CM400DU-24F
CM400DU-12H
CM400DU-12E
CM400DU-24FH
CM400DU-34KA
CM600DU-24F
CM600DU-24NFH
CM900DU-24NF
CM1000DU-34NF
CM1400DU-24NF