北京京诚宏泰科技有限公司

当前位置:北京京诚宏泰科技有限公司>>IGBT模块>>HITACHI日立IGBT模块>>MBN1200D25B供应日立IGBT模块41A296305ECP2

供应日立IGBT模块41A296305ECP2

参   考   价: ¥ 9999

订  货  量: ≥1台

具体成交价以合同协议为准

产品型号:MBN1200D25B

品       牌:

厂商性质:经销商

所  在  地:北京市

更新时间:2024-01-19 12:48:03浏览次数:4585

联系我时,请告知来自 智能制造网
供应日立IGBT模块41A296305ECP2
北京京诚宏泰科技
ABB的 IGBT功率模块为电压从1700伏特至6500伏特的单一IGBT,双/桥臂式IGBT,斩波和双二极管模块。大功率的HiPak IGBT模块具备软开关低损耗和高极限较宽的SOA两大特点。

供应日立IGBT模块41A296305ECP2

北京京诚宏泰科技有限公司原装正品现货供应日立IGBT模块41A296305ECP2

日立IGBT特点:

  • 耐热疲劳耐量大
  • 快恢复开关和低损耗IGBT模块
  • 通过高速软恢复二极管减少噪音
  • 通过低输入电容MOS门极实现低功率驱动
  • 可靠性高、耐久性高

日立IGBT技术

TrenchTrench Gate
降低Vce(sat)
LiPTLow Injection Punch Through
减少开关损耗
sLiPtSoft Low Injection Punch Through
低噪音,降低峰值电压
HiGTHigh Conductivity IGBT
降低Vce(sat)

北京京诚宏泰科技有限公司原装正品现货

PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1200
  • MBN1200E17D
    (PDF format, 293kBytes)
    (2013/03/01)
 M 
1600
  • MBN1600E17D
    (PDF format, 594kBytes)
    (2013/03/01)
 M 
1800
  • MBN1800E17DD
    (PDF format, 679kBytes)
    (2013/03/01)
Soft diodeM 
2400
  • MBN2400E17D
    (PDF format, 282kBytes)
    (2014/08/07)
 M 
2in1 IGBT600
  • MBM600E17D
    (PDF format, 512kBytes)
    (2012/8/28)
 M
  • 2in1 Application Note
    (PDF format, 248kBytes)
1200
  • MBM1200E17D
    (PDF format, 589kBytes)
    (2013/03/01)
 M
  • 2in1 Application Note
    (PDF format, 248kBytes)
600
  • MBM600F17D
    (PDF format, 1.02MBytes)
    (2013/03/01)
Direct liquid coolM
  • technical paper
    (PDF format, 163kBytes)*2
  • 2in1 Application Note
    (PDF format, 248kBytes)
Chopper1200
  • MBL1200E17D
    (PDF format, 325kBytes)
    (2013/03/01)
 M 
2in1
Diode
900
  • MDM900E17D
    (PDF format, 301kBytes)
    (2013/03/01)
 M 
1200
  • MDM1200E17D
    (PDF format, 305kBytes)
    (2013/03/01)
 M 

*1北京京诚宏泰科技有限公司原装正品现货

M:Mass production, W:Working sample, D:Discontinued

*2

The first publication of the papers was at PCIM Europe Conference2010.

1700V E-Version

  • Low VCE(sat)
  • Soft switching
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1200
  • MBN1200E17E
    (PDF format, 679kBytes)
 M 
1800
  • MBN1800E17E
    (PDF format, 827kBytes)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

1700V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
  • Low spike voltage
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1600
  • MBN1600E17F
    (PDF format,459kBytes)
    (2015/3/10)
 M
  • technical paper
    (PDF format, 382kBytes)*2
2400
  • MBN2400E17F
    (PDF format, 436kBytes)
    (2012/11/30)
 W
  • technical paper
    (PDF format, 382kBytes)*2
3600
  • MBN3600E17F
    (PDF format, 408kBytes)
    (2015/3/10)
 M
  • technical paper
    (PDF format, 382kBytes)*2
2in1 IGBT800
  • MBM800E17F
    (PDF format,338kBytes)
    (2015/10/09)
 W
  • technical paper
    (PDF format, 382kBytes)*2
  • 2in1 Application Note
    (PDF format, 248kBytes)
1200
  • MBM1200E17F
    (PDF format,771kBytes)
    (2015/07/29)
 M
  • technical paper
    (PDF format, 382kBytes)*2
  • 2in1 Application Note
    (PDF format, 248kBytes)
Chopper1200
  • MBL1200E17F
    (PDF format,768kBytes)
    (2015/10/09)
 M
  • technical paper
    (PDF format,382kBytes)*2
1600
  • MBL1600E17F
    (PDF format,618kBytes)
    (2015/10/09)
 M
  • technical paper
    (PDF format,382kBytes)*2
  •  

MBN1200E25C 北京京诚宏泰科技有限公司原装正品现货

3300V A-Version

  • Standard 2nd Generation
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1
Diode
1200
  • MDN1200D33
    (PDF形式, 170kBytes)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

3300V C-Version

  • Standard 3rd generation Planer IGBT
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1200
  • MBN1200E33C
    (PDF形式, 390kBytes)
 M 
Chopper800
  • MBL800E33C
    (PDF形式, 504kBytes)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

3300V D-Version

  • Planer IGBT - LiPT
  • Low switching loss
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT800
  • MBN800E33D
    (PDF形式, 409kBytes)
    (2013/03/01)
 M 
800
  • MBN800E33D-AX
    (PDF形式, 316kBytes)
    (2013/07/01)
  • Low recovery loss
  • For high frequency application
M 
1200
  • MBN1200E33D
    (PDF形式, 277kBytes)
    (2013/03/01)
 M 
1200
  • MBN1200H33D
    (PDF形式, 335kBytes)
    (2013/03/01)
  • High isolation package
M 
2in1 IGBT400
  • MBM400E33D-MFR
    (PDF形式,702kBytes) (2015/10/09)
  • Ultra low switching loss and recovery loss
  • For high frequency application
M
  • technical paper *2
    (PDF形式、724kBytes)
  • 2in1 Application Note
    (PDF形式、248kBytes)
Chopper400
  • MBL400E33D
    (PDF形式, 695kBytes)
    (2013/03/01)
 M 
800
  • MBL800E33D
    (PDF形式, 701kBytes)
    (2013/03/01)
 M 
2in1
Diode
800
  • MDM800E33D
    (PDF形式, 185kBytes)
    (2013/03/01)
 M 
1200
  • MDM1200E33D
    (PDF形式, 224kBytes)
    (2013/03/01)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

*2

The first publication of the papers was at PCIM Europe Conference 2012.

3300V E-Version

  • Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT800
  • MBN800E33E
    (PDF形式, 591kBytes)
    (2012/11/30)
 M 
1200
  • MBN1200E33E
    (PDF形式,468kBytes)
    (2015/03/10)
 M 
Chopper800
  • MBL800E33E
    (PDF形式, 443kBytes)
    (2013/03/01)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

3300V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1000
  • MBN1000E33E2
    (PDF形式, 286kBytes)
    (2013/07/01)
 M 
1500
  • MBN1500E33E2
    (PDF形式, 353kBytes)
    (2013/07/01)
 M 
2in1 IGBT500
  • MBM500E33E2-R
    (PDF形式, 559kBytes)
    (2014/08/07)
 M
  • 2in1 Application Note
    (PDF形式, 248kBytes)
Chopper1000
  • MBL1000E33E2-B
    (PDF形式, 227kBytes)
    (2012/11/30)
 M 

*1

M:Mass production, W:Working sample, D:Discontinued

3300V E3-Version

  • Fine Planer HiGT - sLiPT
  • Soft switching
  • Low spike voltage
  • For large Ls circuit, series connection
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1500
  • MBN1500E33E3
    (PDF形式, 371kBytes)
    (2013/07/01)
 M 
2in1 IGBT250
  • MBM250H33E3
    (PDF形式, 502kBytes)
    (2015/07/29)
  • High isolation package
M 

*1

M:Mass production, W:Working sample, D:Discontinued

3300V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT1200
  • MBN1200F33F
    (PDF形式,698kBytes)
    (2015/05/15)
 M
  • technical paper
    (PDF形式, 388kBytes)*2
1800
  • MBN1800F33F
    (PDF形式,661kBytes)
    (2015/05/15)
 M
  • technical paper
    (PDF形式, 724kBytes)*3
  •  

4500V D-Version

  • Planer IGBT - LiPT
  • Low switching loss
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT600
  • MBN600E45A
    (PDF形式, 290kBytes)
 M 
900
  • MBN900D45A
    (PDF形式, 298kBytes)
 M 
2in1
Diode
600
  • MDM600E45A
    (PDF形式, 198kBytes)
 M 
900
  • MDM900E45A
    (PDF形式, 158kBytes)
 D 

*1

M:Mass production, W:Working sample, D:Discontinued

4500V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT800
  • MBN800H45E2
    (PDF形式,468kBytes)
    (2015/05/15)
  • High isolation package
M 
1200
  • MBN1200H45E2
    (PDF形式,543kBytes) (2015/03/10)
  • High isolation package
M 
2in1
Diode
800
  • MDM800H45E2
    (PDF形式,425kBytes) (2015/10/09)
  • High isolation package
M 
1200
  • MDM1200H45E2
    (PDF形式, 291kBytes) (2013/07/01)
  • High isolation package
M 

*1

M:Mass production, W:Working sample, D:Discontinued

4500V E2-H-Version

  • Fine Planer HiGT - sLiPT
  • Low switching loss
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT800
  • MBN800H45E2-H
    (PDF形式,477kBytes) (2015/05/15)
  • High isolation package
M 
1200
  • MBN1200H45E2-H
    (PDF形式,577kBytes) (2015/03/10)
  • High isolation package
M 
2in1 IGBT200
  • MBM200H45E2-H
    (PDF形式,528kBytes) (2015/03/10)
  • High isolation package
M 
2in1
Diode
800
  • MDM800H45E2-H
    (PDF形式,252kBytes) (2013/07/01)
  • High isolation package
W 
1200
  • MDM1200H45E2-H
    (PDF形式,227kBytes) (2015/03/10)
  • High isolation package
M 

*1

M:Mass production, W:Working sample, D:Discontinued

4500V F-Version

  • Advanced Trench HiGT - sLiPT
  • Low VCE(sat)
  • High current rating
  • RoHS compliance
PackageIC(A)FeatureApplication Note
1in1
IGBT
1000
  • High isolation package
  • technical paper*2
    (PDF形式, 1400kBytes)
1500
 

 

6500V E2-Version

  • Fine Planer HiGT - sLiPT
  • Low VCE(sat)
  • Soft switching
PackageIC(A)Type Name
(Update)
FeatureStatus*1Application Note
1in1 IGBT500
  • MBN500H65E2
    (PDF形式, 336kBytes)
    (2013/07/01)
  • High isolation package
M 
750
  • MBN750H65E2
    (PDF形式,430kBytes)
    (2015/03/10)
  • High isolation package
M 
2in1
Diode
500
  • MDM500H65E2
    (PDF形式, 255kBytes)
    (2013/07/01)
  • High isolation package
M 
750
  • MDM750H65E2
    (PDF形式, 250kBytes)
    (2013/07/01)
  • High isolation package
M 

会员登录

X

请输入账号

请输入密码

=

请输验证码

收藏该商铺

X
该信息已收藏!
标签:
保存成功

(空格分隔,最多3个,单个标签最多10个字符)

常用:

提示

X
您的留言已提交成功!我们将在第一时间回复您~
拨打电话
在线留言